KVR1333D3E9SK3-24G Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 24GB (8GB 2Rx8 1G x 72-Bit x 3 pcs.)

Memory Module Specifications
KVR1333D3E9SK3/24G
24GB (8GB 2Rx8 1G x 72-Bit x 3 pcs.)
PC3-10600 CL9 240-Pin ECC DIMM Kit
Important Information: The module defined in this data sheet is one of several configurations available under
this part number. While all configurations are compatible, the DRAM combination and/or the module height may
vary from what is described here.
DESCRIPTION
ValueRAM's KVR1333D3E9SK3/24G is a kit of three 1G x 72-
bit (8GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM),
2Rx8, ECC memory modules, based on eighteen 512M x 8-bit
FBGA components per module. Total kit capacity is 24GB. The
SPD's are programmed to JEDEC standard latency DDR3-1333
timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact
fingers. The electrical and mechanical specifications are as
follows:
FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Thermal Sensor Grade B
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Power (Operating)
UL Rating
Operating Temperature
Storage Temperature
9 cycles
49.5ns (min.)
260ns (min.)
36ns (min.)
1.310* (per module)
94 V - 0
0^o C to 85^o C
-55^o C to +100^o C
*Power will vary depending on the SDRAM used.
Continued >>
Document No. VALUERAM1066-001.A00 03/21/12 Page 1