KVR1066D3S8S7-2G Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 2GB 1Rx8 256M x 64-Bit PC3-1066 CL7 204-Pin SODIMM

Memory Module Specifications
KVR1066D3S8S7/2G
2GB 1Rx8 256M x 64-Bit PC3-1066
CL7 204-Pin SODIMM
DESCRIPTION
This document describes ValueRAM's 256M x 64-bit (2GB)
DDR3-1066 CL7 SDRAM (Synchronous DRAM), 1Rx8 memory
module, based on eight 256M x 8-bit DDR3-1066 FBGA compo-
nents. The SPD is programmed to JEDEC standard latency
DDR3-1066 timing of 7-7-7. This 204-pin SODIMM uses gold
contact fingers. The electrical and mechanical specifications
are as follows:
FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 533MHz fCK for 1066Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6 (DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration: Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Power (Operating)
UL Rating
Operating Temperature
Storage Temperature
7 cycles
50.63ns (min.)
160ns (min.)
37.5ns (min.)
1.101 W*
94 V - 0
0^o C to 85^o C
-55^o C to +100^o C
*Power will vary depending on the SDRAM used.
Continued >>
Document No. VALUERAM0991-001.A00 06/17/11 Page 1