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ICTE-5 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION
ICTE-5 thru ICTE-45C
Transient Voltage Suppressor
Breakdown Voltage 5.0 to 45 Volts
Peak Pulse Power 1500 Watts
Features
CASE: DO-201AD (DO-27)
 Breakdown Voltages (VBR) from 5.0 to 45V
 1500W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
 Fast Response Time
 Low incremental surge resistance
 Excellent clamping capability
 Available in uni-directional and bi-directional
印无效 Dimensions in inches and (millimeters)
 High temperature soldering guaranteed: 265℃ /10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Application
 Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICS, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Mechanical Data
 Case: Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
 Terminals: Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
 Marking: Part number and polarity diode symbol
 Polarity: Cathode indicated by band
 Weight: 1.2g(Approximately)
Maximum Ratings and Electrical Characteristics @ 25OC unless otherwise specified
打 Symbol
Conditions
Value
Unit
PPPM Peak pulse power capability with a 10/1000μs
1500
W
IPPM Peak pulse current with a 10/1000μs
SEE TABLE
A
PM(AV) Steady state power dissipation at TL=40℃ ,Lead lengths 0.375”(10mm)
5
W
IFSM
Peak forward surge current,8.3ms single half sine-wave unidirectional only⑴
200
A
VF
Maximum instantaneous forward voltage at 100A for unidirectional only
3.5
V
RθJL Thermal resistance junction to lead
22
℃/W
RθJA Thermal resistance junction to ambient
82
℃/W
TJ, TSTG Operating and Storage Temperature
-65 to +150
℃
Notes:
⑴ Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
Document Number: ICTE-5 thru ICTE-45C
Feb.29,2012
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