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| ICA-624-SGT Datasheet, PDF (1/5 Pages) Samtec, Inc – AUTOMATED INSERTION DIP SOCKETS | |||
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FJPF5027
High Voltage and High Reliability
⢠High Speed Switching
⢠Wide SOA
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
VCEX(sus)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Test Condition
IC = 1mA, IE = 0
IC = 5mA, IB = 0
IE = 1mA, IC = 0
IC = 1.5A, IB1 = -IB2 = 0.3A
L = 2mH, Clamped
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Cob
fT
tON
tSTG
tF
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
VCB = 800V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.2A
VCE = 5V, IC = 1A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 0.2A
VCC = 400V
IC = 5IB1 = -2.5IB2 = 2A
RL = 200â¦
Value
1100
800
7
3
10
1.5
40
150
- 55 ~ 150
Min.
1100
800
7
800
Typ.
10
8
60
15
Units
V
V
V
A
A
A
W
°C
°C
Max.
Units
V
V
V
V
10
µA
10
µA
40
2
V
1.5
V
pF
MHz
0.5
µs
3
µs
0.3
µs
hFE Classification
Classification
hFE1
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
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