HX318C10F-8 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 8GB 1G x 64-Bit DDR3-1866

HX318C10F/8
8GB 1G x 64-Bit DDR3-1866
CL10 240-Pin DIMM
SPECIFICATIONS
CL(IDD)
10 cycles
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
44.75ns (min.)
260ns (min.)
Row Active Time (tRASmin)
32.125ns (min.)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
TBD W*
94 V - 0
0^o C to 85^o C
-55^o C to +100^o C
*Power will vary depending on the SDRAM used.
DESCRIPTION
HyperX HX318C10F/8 is a 1G x 64-bit (8GB) DDR3-1866 CL10
SDRAM (Synchronous DRAM) 2Rx8 memory module, based on
sixteen 512M x 8-bit DDR3 FBGA components. This module
has been tested to run at DDR3-1866 at a low latency timing of
10-11-10 at 1.5V. Additional timing parameters are shown in
the PnP Timing Parameters section below. The JEDEC stan-
dard electrical and mechanical specifications are as follows:
Note: The PnP feature offers a range of speed and timing options to support
the widest variety of processors and chipsets. Your maximum speed will
be determined by your BIOS.
PnP JEDEC TIMING PARAMETERS:
• DDR3-1866 CL10-11-10 @1.5V
• DDR3-1600 CL9-10-9 @1.5V
• DDR3-1333 CL8-9-8 @1.5V
FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 933MHz fCK for 1866Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 13, 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• Height 1.291” (32.80mm) w/heatsink, double sided
component
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