HX316C9SR-8 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – DDR3-1600 CL9 240-Pin DIMM

HX316C9SR/8
8GB (8GB 1G x 64-Bit)
DDR3-1600 CL9 240-Pin DIMM
DESCRIPTION
HyperX HX316C9SR/8 is a 1G x 64-bit (8GB) DDR3-1600 CL9
SDRAM (Synchronous DRAM) 2Rx8, memory module, based
on sixteen 512M x 8-bit FBGA components per module. Each
module supports Intel® XMP (Extreme Memory Profiles).
Each module has been tested to run at DDR3-1600 at a low
latency timing of 9-9-9 at 1.5V. The SPDs are programmed
to JEDEC standard latency DDR3-1600 timing of
11-11-11 at 1.5V. Each 240-pin DIMM uses gold contact
fingers. The JEDEC standard electrical and mechanical
specifications are as follows:
XMP TIMING PARAMETERS
• JEDEC: DDR3-1600 CL11-11-11 @1.5V
• XMP Profile #1: DDR3-1600 CL9-9-9 @1.5V
kingston.com/hyperx
SPECIFICATIONS
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
11 cycles
48.125ns(min.)
260ns(min.)
35ns(min.)
TBD W*
94 V - 0
0^o C to +85^o C
-55^o C to +100^o C
*Power will vary depending on the SDRAM used.
FEATURES
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal banks
• Programmable CAS latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write (either on the fly using A12 or
MRS)
• Bi-directional Differential Data Strobe
• Internal (self) calibration: Internal self calibration through ZQ
pin (RZQ: 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°Cº
• Asynchronous Reset
• Height 1.311” (33.30mm), w/heatsink, double sided component
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Document No. 4807122-001.B00 04/22/15 Page 1