HX313C9FB-4 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 4GB 512M x 64-Bit DDR3-1333

HX318C10FB/4
HX313C9FB/4
4GB 512M x 64-Bit DDR3-1333
CL9 240-Pin DIMM
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
49.125ns (min.)
260ns (min.)
Row Active Time (tRASmin)
36ns (min.)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
TBD W*
94 V - 0
0^o C to 85^o C
-55^o C to +100^o C
*Power will vary depending on the SDRAM used.
DESCRIPTION
HyperX HX313C9FB/4 is a 512M x 64-bit (4GB) DDR3-1333
CL9 SDRAM (Synchronous DRAM) 1Rx8 memory module,
based on eight 512M x 8-bit DDR3 FBGA components. This
module has been tested to run at DDR3-1333 at latency timing
9-9-9 at 1.5V. The JEDEC standard electrical and mechanical
specifications are as follows:
FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• _{Height 1.291” (32.80mm) w/heatsink, single sided}
component
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Document No. 4806990-001.B00 04/23/15 Page 1