HSB Datasheet, PDF (1/1 Pages) Littelfuse – Bolt-down Fuses

HSB
SOI Complementary Bipolar Process
Data Sheet 291200 issue 2 April 12
HSB is a 26V, high speed, double polysilicon, trench isolated,
complementary SOI bipolar process providing vertical integrated PNP,
polysilicon resistors, MIS capacitors with PtSi Schottky diodes.
Applications
• High Speed Video Amplifiers
• ADSL Drivers
• High Speed Amplifiers
• Laser Diode Drivers for DVD
• Cable Modems
Key Process Feature
• Low Substrate Capacitance
• Polysilicon resistors -110/155/1400 Ohms/sq
• Pt Si Schottky Diodes V_f=0.5 V
• MIS capacitors – 0.6 fF/µm²
• Two level metal
npn cross section
Base
Emitter
Collector
oxide
P+ _Base P+
epitaxy (n-)
DC
BN
BURIED OXIDE
Substrate
vpnp cross section
Base
Emitter
Collector
N+ _Base N+
P-well
PDC
BP
BURIED
OXIDE
oxide
npn parameters (0.6 x 4.0um emitter)
parameter Condition
Value
fT
Ic=0.14mA Vce=5V 5
HFE
Ic=10µA Vce=5V
166
VAF
215
BVCEO Ic=10µA
>26
BVCBO Ic=1µA
>40
CJE
Vbe=0
12
CJC
Vbc=0
5
CJS
Vcs=0
49
Units
GHz
V
V
V
fF
fF
fF
Vertical pnp parameters (0.6 X 4.0µm emitter)
parameter Condition
Value Units
fT
Ic=0.11mAVce=5V 4
GHz
HFE
Ic=10µA Vce=5V
52
VAF
95 V
BVCEO Ic=10µA
>30 V
BVCBO Ic=1µA
>40 V
CJE
Vbe=0
10 fF
CJC
Vbc=0
5
fF
CJS
Vcs=0
42 fF
Polysilicon Resistor Values
parameter Value
LoP
155 ± 20
LoN
110 ± 20
HiP
1.4 ± 0.2
Design Rules
Feature
Emitter
LoP, LoN resistor
HiP resistor
Contact
1st Layer metal
2^nd layer metal
Min µm
0.6 X 1.6
1.2
1.0
1.0 X 1.6
1.4
1.4
Units
Ω
Ω
kΩ
Spacing µm
0.8
0.8
1.4
1.0
1.0
Data Sheet 291200 issue 2 April 12
Process information and data (“Information”) in this document is an outline only, for general information purposes ; it does not constitute a representation or
warranty as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his
requirements.
While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of
such Information.
All use of, and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request .
Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ
Tel: [phone]
Fax: [phone]
Web: www.plesseysemiconductors.com