HGC Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – double-polysilicon trench isolated bipolar process

HGC
Bipolar Process
Data Sheet DS00104 / June 2010
HGC is a double-polysilicon trench isolated bipolar process optimised
for RF applications in the range 900 MHz to 2.4 GHz.
Key parameters (minimum geometry device)
NPN
fT
22 GHz at IC=0.4 mA, Vce=3 V
CJC
3.3 fF
CJE
5.4fF
Bvceo
> 4.5V
Applications
• LNAs
• Synthesisers
• Cellular radios
• Wireless LANs
• High speed logic
Key Process Feature
• Integrated inductors (optional)
• 470 MHz lateral pnps
• Varactor diodes - 0.5 fF/μm²
• Schottky Diodes - V_f=0.5 V
• Polysilicon resistors - 110/155/1400 Ohms/sq
• MIM capacitors - 0.65 fF/μm² (optional)
• MIS capacitors - 2.75 fF/μm² (optional)
• Two level or three level metal option
Npn cross section
Base
Emitter
Collector
oxide
P+ _base
P+
epitaxy (n-)
DC
Oxide
BN
CS
CS
Substrate (p-)
npn parameters (0.6 x 3.0um emitter)
parameter Condition
Value
fT
Ic=0.7mA Vce=2V 22
HFE
Ic=10μA Vce=2V 140
VAF
63
BVCEO Ic=1μA
>4.5
BVCBO Ic=1μA
>8.0
CJE
Vbe=0
10
CJC
Vbc=0
8
CJS
Vcs=0
17
Units
GHz
V
V
V
fF
fF
fF
Lateral pnp parameters (1.8 X 1.8μm emitter)
parameter Condition
Value Units
fT
Ic=40μA Vce=2V 470 MHz
HFE
Ic=10μA Vce=2V 64
VAF
12
V
BVCEO Ic=1μA
>5.5 V
Polysilicon Resistor Values
parameter Value
LoP
155 ± 20
LoN
110 ± 20
HiP
1.4 ± 0.2
Units
Ω
Ω
kΩ
25
20
15
10
5
0
1.00E-06
fT vs IC min geometry HGC npn
1.00E-05
1.00E-04
IC (A)
1.00E-03
1.00E-02
Design Rules
Feature
Emitter
HiP resistor
LoP, LoN resistor
Contact
1st Layer metal
2^nd layer metal
3^rd layer metal
Min μm
0.6 X 1.6
1.0
1.2
1.0 X 1.6
1.4
1.4
3.0
Spacing μm
0.8
0.8
1.4
1.0
1.0
2.0
Data Sheet DS00104 /June 2010
Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty
as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements .
While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of
such Information.
All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request .
Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ
Tel: [phone]
Fax: [phone]
Web: www.plesseysemiconductors.com