GM1213 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2003/05/07
REVISED DATE :2004/12/14B
GM1213
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GM1213 is designed for using in power amplifier applications or power switching applications.
Package Dimensions
SOT-89
Absolute Maximum Ratings Ta=25к
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current at
Base current
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IB
Collector Power Dissipation
PC(Note 1)
Characteristics at Ta = 25к
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Symbol
ICBO
IEBO
V(BR)CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
ton
Switching time
Storage time
tstg
Min.
-
-
-50
70
20
-
-
-
-
-
-
Fall time
tf
-
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5q TYP.
0.70 REF.
Typ.
-
-
-
-
-
-
120
40
0.1
1.0
Ratings
Unit
+150
ć
-55 ~ +150
ć
-50
V
-50
V
-5
V
-2
A
-0.4
A
500
mW
1000
mW
Note 1:Mounted on ceramic substrate (250mm²x0.8t)
Max.
-0.1
-0.1
-
240
-
-0.5
-1.2
-
-
Unit
uA
uA
V
V
V
MHz
Pf
Test Conditions
VCB=-50V,IE=0
VEB=-5V,Ic=0
IC=-10mA,IB=0
VCE=-2V,Ic=-0.5A
VCE=-2V,Ic=-2.0A
IC=-1A, IB=-0.05A
IC=-1A, IB=-0.05A
VCE=-2V, IC=-0.5A
VCB=-10V,IE=0, f=1MHz
-
s
-
s
0.1
-
s
Classification Of hFE1
Rank
O
Range
70-140
Y
120-240
GM1213
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