 English |
|
|
|
|
|
|
|
| FZTA14TA Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR | |||
| |||
|
SOT223 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 Â JANUARY 1996
FZTA14
PARTMARKING DETAIL:- DEVICE TYPE IN FULL
COMPLEMENTARY TYPE :- FZTA64
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCES
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
SOT223
VALUE
30
30
30
10
1
2
-55 to +150
UNIT
V
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CES 30
V
IC=100µA, VBE=0
Collector Cut-Off
ICBO
Current
100 nA
VCB=30V, IE=0
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Turn-On Voltage
VBE(on)
100 nA
1.5 V
1.6 V
2.0 V
VEB=10V, IC=0
IC=100mA, IB=0.1mA*
IC=1A, IB=1mA*
IC=100mA, VCE=5V*
Base-Emitter
VBE(sat)
2.0
Saturation Voltage
2.2
Static Forward Current hFE
10K
Transfer Ratio
20K
5K
Transition Frequency fT
170
V
V
MHz
IC=100mA, IB=0.1mA
IC=1A, IB=1mA
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=1A, VCE=5V*
IC=50mA, VCE=5V*
f=20MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT38C datasheet.
3 - 301
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese