FZT968TA Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR

SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) POWER TRANSISTOR
ISSUE 3 – OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; R_CE(sat) 44mΩ at 5A
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage
FZT968
C
PARTMARKING DETAIL – FZT968
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
-15
V
Collector-Emitter Voltage
V_CEO
-12
V
Emitter-Base Voltage
V_EBO
-6
V
Peak Pulse Current
I_CM
-20
A
Continuous Collector Current
I_C
-6
A
Power Dissipation at T_amb=25°C
P_tot
3
W
Operating and Storage Temperature Range
T_j:T_stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
V_(BR)CBO -15
V_(BR)CEO -12
V_(BR)EBO -6
I_CBO
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
I_EBO
V_CE(sat)
Base-Emitter
Saturation Voltage
V_BE(sat)
-28
V
-20
V
-8
V
-10 nA
-1.0 µA
-10 nA
-65 -130 mV
-132 -170 mV
-360 -450 mV
-1050 -1200 mV
I_C=-100µA
I_C=-10mA*
I_E=-100µA
V_CB=-12V
V_CB=-12V, T_amb=100°C
V_EB=-6V
I_C=-500mA, I_B=-5mA*
I_C=-2A, I_B=-50mA*
I_C=-6A, I_B=-250mA*
I_C=-6A, I_B=-250mA*
Base-Emitter
Turn-On Voltage
V_BE(on)
-870 -1050 mV I_C=-6A, V_CE=-1V*
Static Forward Current
h_FE
300 450
Transfer Ratio
300 450 1000
200 300
150 240
50
I_C=-10mA, V_CE=-1V*
I_C=-500mA, V_CE=-1V*
I_C=-5A, V_CE=-1V*
I_C=-10A, V_CE=-1V*
I_C=-20A, V_CE=-1V*
Transition Frequency
f_T
80
MHz I_C=-100mA, V_CE=-10V
f=50MHz
Output Capacitance
C_obo
161
pF
Switching Times
t_on
t_off
120
ns
116
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
V_CB=-20V, f=1MHz
I_C=-4A, I_B1=-400mA
I_B2=400mA, V_CC=-10V
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