FZT849TA Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR

SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* Extremely low equivalent on-resistance; R_CE(sat)36mΩ at 5A
* 7 Amp continuous collector current (20 Amp peak)
* Very low saturation voltages
* Excellent gain charateristics specified upto 20 Amp
* P_tot =3 Watts
PARTMARKING DETAILS - FZT849
COMPLEMENTARY TYPE - FZT949
FZT849
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V_CBO
80
V
Collector-Emitter Voltage
V_CEO
30
V
Emitter-Base Voltage
V_EBO
6
V
Peak Pulse Current
I_CM
20
A
Continuous Collector Current
I_C
7
A
Power Dissipation at T_amb=25°C
P_tot
3
W
Operating and Storage Temperature Range
T_j:T_stg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
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