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| FZT696BTA Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |||
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SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT696B
ISSUE 4 Â FEBRUARY 1997
FEATURES
* 250 Volt VCEO
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
PARTMARKING DETAIL Â FZT696B
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
180
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
0.5
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 180
V
IC=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO 180
V
IC=10mA*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)EBO 5
ICBO
IEBO
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-OnVoltage
VBE(on)
Static Forward Current Transfer hFE
500
Ratio
150
Transition Frequency
fT
70
0.1
0.1
0.2
0.2
0.25
0.9
0.9
V
µA
µA
V
V
V
V
V
MHz
IE=100µA
VCB=140V
VEB=4V
IC=50mA, IB=0.5mA*
IC=100mA, IB=2mA*
IC=200mA, IB=5mA*
IC=200mA, IB=5mA*
IC=200mA, VCE=5V*
IC=100mA, VCE=5V*
IC=200mA, VCE=5V*
IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
Cobo
ton
toff
200
6
80
4400
pF VEB=0.5V, f=1MHz
pF VCE=10V, f=1MHz
ns IC=100mA, IB1=10mA
ns IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 227
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