 English |
|
|
|
|
|
|
|
| FZT657TA Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
| |||
|
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3Â FEBRUARY 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE - FZT757
PARTMARKING DETAIL - FZT657
FZT657
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
0.5
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 300
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 300
V
IC=10mA*
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V
IE=100µA
Collector Cut-Off Current ICBO
0.1
µA
VCB=200V
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward Current hFE
40
Transfer Ratio
50
Transition Frequency
fT
30
0.1
µA
0.5
V
1.0
V
1.0
V
MHz
Output Capacitance
Cobo
20
pF
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
3 - 213
VEB=3V
IC=100mA, IB=10mA*
IC=100mA, IB=10mA*
IC=100mA, VCE =5V*
IC=10mA, VCE =5V*
IC=100mA, VCE =5V*
IC=10mA, VCE =20V
f=20MHz
VCB =20V, f=1MHz
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese