FMMV2101TA Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES

SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODES
ISSUE 3 – JANUARY 1996
7
PIN CONFIGURATION

PARTMARKING DETAILS
SEE TUNING CHARACTERISTICS
FMMV2101
to
FMMV2109
2
1
3
!
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Reverse Voltage
Forward Current
Power Dissipation at T_amb=25°C
Operating and Storage Temperature Range
SYMBOL
V_R
I_F
P_tot
T_j:T_stg
VALUE
30
200
330
-55 to +150
UNIT
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Reverse Breakdown
V_BR
30
Voltage
Reverse current
I_R
Series Inductance
L_S
20
3.0
Diode Capacitance
T_CC
Temperature Coefficient
Case Capacitance
C_C
280 400
0.15
UNIT
V
CONDITIONS.
I_R = 10µA
nA
nH
ppm/ °C
pF
V_R = 25V
f=250MHz
Lead length≈1.5mm
V_R = 4V, f=1MHz
Lead length≈1.5mm
f=1MHz
TUNING CHARACTERISTICS (at T_amb = 25°C).
Nominal Capacitance (pF) Q – Figure of MERIT
Type No.
V_R = 4V, f=1MHz
V_R = 4V, f=50MHz
Min.
Nom.
Max.
FMMV2101 6.1
6.8
7.5
450
FMMV2103 9.0
10.0
11.0
400
FMMV2104 10.8
12.0
13.2
400
FMMV2105 13.5
15.0
16.5
400
FMMV2107 19.8
22.0
24.2
350
FMMV2108 24.3
27.0
29.7
300
FMMV2109 29.3
33.0
36.3
280
* SELECTED DEVICE RANGE OFFERED ONLY
Turning Ratio
C₂ / C₃₀
f=1MHz
Min.
Max.
2.5
3.3
2.6
3.3
2.6
3.3
2.6
3.3
2.7
3.3
2.7
3.3
2.7
3.3
Partmark
Detail
6R
6G
6H
6J
6L
6M
6N
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