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| FMMT918TA Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
VHF/UHF TRANSISTOR
ISSUE 2 Â JANUARY 1996
PARTMARKING DETAILS Â 3B
FMMT918
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
30
V
15
V
3
V
100
mA
330
mW
-55 to +150
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 30
V
IC=1µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 15
V
IC=3mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 3
V
IE=10µA, IC=0
Collector Cut-Off Current ICBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.05 µA
0.4
V
VCB=15V, IE=0
IC=10mA, IB=1mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0
V
IC=10mA, IB=1mA
Static Forward Current hFE
20
Transfer Ratio
IC=3mA, VCE=1V
Transition Frequency
fT
600
MHz IC=4mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
Input Capacitance
Cibo
Noise Figure
N
3.0
pF
1.7
pF
1.6
pF
6.0
dB
Common Emitter
Gpe
Power Gain
15
dB
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle â¤2%
Spice parameter data is available upon request for this device
VCB=0V, f=1MHz
VCB=10V, f=1MHz
VEB=0.5V,f=1MHz
VCE=6V, IC=1mA
f=60MHz, RG=400â¦
VCB=12V, IC=6mA
f=200MHz
3 - 168
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