FGA15N120ANTDTU_F109 Datasheet, PDF (1/10 Pages) List of Unclassifed Manufacturers – Extremely enhanced avalanche capability

May 2006
FGA15N120ANTD / FGA15N120ANTD_F109
tm
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: V_{CE(sat), typ} = 1.9V
@ I_C = 15A and T_C = 25°C
• Low switching loss: E_{off, typ} = 0.6mJ
@ I_C = 15A and T_C = 25°C
• Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven, etc.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_CM
I_F
I_FM
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
@ T_C = 25°C
@ T_C = 100°C
@ T_C = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25°C
@ T_C = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJC
R_θJC
R_θJA
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
FGA15N120ANTD
1200
± 20
30
15
45
15
45
186
74
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.67
2.88
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
www.fairchildsemi.com