FDMS8026S Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – Advanced package and Silicon combination for low rDS(on) and high efficiency

FDMS8026S
N-Channel PowerTrench^® SyncFET^TM
30 V, 22 A, 4.3 mΩ
August 2010
Features
General Description
„ Max r_DS(on) = 4.3 mΩ at V_GS = 10 V, I_D = 19 A
„ Max r_DS(on) = 5.2 mΩ at V_GS = 4.5 V, I_D = 17 A
„ Advanced package and Silicon combination for low r_DS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMS8026S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Top
Bottom
Pin 1
S
D₅
S
S
G
D₆
Power 56
D
D
D
D
D₇
D8
4G
3S
2S
1^S
MOSFET Maximum Ratings T_A= 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
22
80
19
100
33
41
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.0
(Note 1a)
50
°C/W
Device Marking
FDMS8026S
Device
FDMS8026S
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
1
FDMS8026S Rev.C1
www.fairchildsemi.com