ECH8601R Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

SMD Type
Mosfets
N-Channel Silicon MOSFET
ECH8601R ^{General-Purpose Switching Device}
Applications
Features
• Low ON-resistance.
• _{Built-in gate protection resistor.}
• _{2.5V drive.}
• _{Best suited for LiB charging and discharging Switch.}
• _{Common-drain type.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm²!0.8mm) 1unit
Mounted on a ceramic board (900mm²!0.8mm)
Ratings
Unit
20
V
±12
V
6.5
A
40
A
1.4
W
1.5
W
150
°C
--55 to +150
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=4A, VGS=4.5V
ID=4A, VGS=4.0V
ID=4A, VGS=3.1V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
Unit
min
typ
max
20
V
1 µA
±10 µA
0.5
1.3
V
7.0
10
S
17
23 mΩ
18
24 mΩ
20
30 mΩ
24
35 mΩ
1140
pF
420
pF
190
pF