CTLDM303N-M832DS_12 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Dual, MOSFETs in the TLM832DS package

Product Brief
CTLDM303N-M832DS ^{(30V, 3.6A N-Channel)}
CTLDM304P-M832DS ^{(30V, 4.2A P-Channel)}
Dual, MOSFETs in the TLM832DS package
TLM832DS
Central Semiconductor’s CTLDM303N-M832DS (Dual, N-Channel)
and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode
silicon MOSFETs designed for high speed pulsed amplifier and driver
applications. These energy efficient MOSFETs offer beneficially low
rDS(ON), low gate charge, and low threshold voltage.
Typical Electrical Characteristics
Features:
• Low rDS(ON)
• High current
• Low gate charge
Applications:
• DC-DC converters
• Drive circuits
• Power management
Benefits:
• High current density
• Energy efficiency
Samples:
Literature:
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Type No.
Maximum Ratings (TA = 25˚C unless otherwise noted)
ID
PD
TJ, Tstg
Θ_JA
(A)
(W)
(˚C)
(˚C/W)
MAX
MAX
MAX
MAX
BVDSS
(V)
MIN
Electrical Characteristics: (TA = 25˚C unless otherwise noted)
VGS(th)
(V)
rDS(ON)
@ VGS @ ID
(mΩ) (mΩ) (V)
(A)
Qgs
(nC)
Ciss
(pF)
MIN MAX TYP MAX
TYP TYP
CTLDM303N-M832DS
(N-Channel)
3.6
CTLDM304P-M832DS
(P-Channel)
4.2
1.65
-55 to +150
76
1.65
-55 to +150
76
30
0.6 1.2
33
42
40
78
4.5
2.5
1.8
1.8
0.9 590
60
70
10
4.2
30
0.7 1.3
64
75
4.5
4.0
1.8 760
86
120
2.5
1.0
Crss
(pF)
TYP
55
53
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