CLT130W Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN Silicon Phototransistors

CLT130W, CLT131W, CLT132W
NPN Silicon Phototransistors
The CLT130W, CLT131W and CLT132W are
exact replacements for obsolete part numbers
CLT2020, CLT2030 and CLT2035.
0.190 (4.83)
0.176 (4.47)
0.210 (5.33)
0.190 (4.83)
0.500 (12.7) min
® _{Clairex}
Technologies, Inc.
July, 2001
0.215 (5.46)
0.205 (5.21)
0.160 (4.06)
0.150 (3.81)
0.010 (0.25)
max
0.025 (0.64)
max
COLLECTOR
BASE
EMITTER
0.100 (2.54) dia
0.019 (0.48)
0.016 (0.41)
0.147 (3.73)
0.137 (3.48)
ALL DIMENSIONS ARE IN INCHES_C(M_asIL_eLI₁M₈ETERS)
Collector electrically
connected to case.
features
absolute maximum ratings (T_A = 25°C unless otherwise stated)
• high sensitivity
storage temperature ...................................................................... -65°C to +200°C
• ± 35° acceptance angle
operating temperature.................................................................... -65°C to +150°C
• TO-18 hermetically sealed package ^{lead soldering temperature(1) ......................................................................... 260°C}
• transistor base is bonded
• RoHS compliant
collector-emitter voltage..................................................................................... 30V
continuous collector current⁽²⁾ ......................................................................... 50mA
continuous power dissipation⁽³⁾ .................................................................... 250mW
description
The CLT130W, CLT131W and
notes:
CLT132W are silicon NPN planar
1. 0.06” (1.5mm) from the header for 5 seconds maximum.
epitaxial phototransistors mounted in ^{2. 200mA when pulsed at 1.0ms, 10% duty cycle.}
TO-18 flat window packages. The
3. Derate linearly 1.6mW/°C from 25°C free air temperature to T_A = +150°C.
wide acceptance angle provided by
the flat window enables even
reception over a relatively large area.
For additional information, call
Clairex
electrical characteristics (T_A = 25°C unless otherwise noted)
symbol parameter
min typ max units test conditions
Light current⁽⁴⁾
IL
CLT130W
0.4
-
CLT131W
1.0
-
CLT132W
2.5
-
-
mA
-
mA
-
mA
ICEO
Collector dark current
-
25
nA
V(BR)CEO Collector-emitter breakdown
30
-
-
V
V(BR)CBO Collector-base breakdown
5.0
-
-
V
V(BR)ECO Emitter-collector breakdown
5.0
-
-
V
VCE(sat)
tr, tf
Collector-emitter saturation voltage
Output rise and fall time⁽⁵⁾
-
-
0.30
V
-
3.0
-
µs
θHP
Total angle at half sensitivity points
-
70
-
deg.
notes: 4. Radiation source for all light current testing is a 850nm IRED.
5. The radiation source is a pulsed gallium arsenide IRED with rise and fall times of ≤0.3µs.
VCE=5V, Ee=5.0mW/cm²
VCE=5V, Ee=5.0mW/cm²
VCE=5V, Ee=5.0mW/cm²
VCE=10V, Ee=0
IC=100µA, Ee=0
IC=100µA, Ee=0
IE=100µA, Ee=0
IC=0.4mA, Ee=5.0mW/cm²
V_CC=5V, R_L=1KΩ
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/22/06
Clairex Technologies, Inc.
Phone: [phone]
1301 East Plano Parkway
Fax: [phone]
Plano, Texas 75074-8524
www.clairex.com