 English |
|
|
|
|
|
|
|
| BSR43TA Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |||
| |||
|
Not Recommended for New Design
Please Use FMMT491
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 â FEBRUARY 1996 7
BSR41
BSR43
COMPLEMENTARY TYPES â BSR43 - BSR33
C
BSR41 - BSR31
PARTMARKING DETAIL
â BSR43 - AR4
BSR41 - AR2
ABSOLUTE MAXIMUM RATINGS.
E
C
B
SOT89
PARAMETER
SYMBOL
BSR41
BSR43
UNIT
Collector-Base Voltage
VCBO
70
90
V
Collector-Emitter Voltage
VCEO
60
80
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
PTOT
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
BSR43
Breakdown Voltage BSR41
V(BR)CBO
90
70
V
IC=100µA
Collector-Emitter BSR43
Breakdown Voltage BSR41
V(BR)CEO
80
60
V
IC=10mA *
Emitter-Base Breakdown Voltage V(BR)EBO 5
Collector Cut-Off Current
ICBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Collector Capacitance
Emitter Capacitance
Transition Frequency
VCE(sat)
VBE(sat)
hFE
30
100
50
Cc
Ce
fT
100
100
50
0.25
0.5
1.0
1.2
300
12
90
V
nA
µA
V
V
V
V
pF
pF
MHz
IE=10µA
VCB=60V
VCB=60V, Tamb =125°C
IC =150mA, IB =15mA
IC =500mA, IB =50mA
IC =150mA, IB =15mA
IC =500mA, IB =50mA
IC =100µA, VCE =5V
IC =100mA, VCE =5V
IC =500mA, VCE =5V
VCB =10V, f=1MHz
VEB =0.5V, f=1MHz
IC=50mA, VCE=10V
f =35MHz
Turn-On Time
Ton
250 ns
Turn-Off Time
Toff
1000 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FMMT493 datasheet.
VCC =20V, IC =100mA
IB1 =IB2 =5mA
3 - 68
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese