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| BCX6925TA Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT89 PNP SILICON PLANAR | |||
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BCX69-16 OBSOLETE - USE BCX69-25
SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 â FEBRUARY 1995
7
FEATURES
* High gain and low saturation voltages
BCX69
C
COMPLEMENTARY TYPE â BCX68
PARTMARKING DETAIL â
BCX69 â CJ
BCX69-16 â CG
BCX69-25 â CH
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT89
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown voltage
V(BR)CBO -25
V
IC =-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -20
V
IC =-10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE =-100µA
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
-0.1 µA
-10 µA
-10 µA
-0.5 V
VCB =-25V
VCB =-25V, Tamb =150°C
VEB =-5V
IC =-1A, IB =-100mA
Base-Emitter Turn-On
Voltage
VBE(on)
-1.0 V
IC =-1A, VCE =-1V
Static Forward Current hFE
50
Transfer Ratio
85
375
60
BCX69-16 100
250
BCX69-25 160 250 400
IC =-5mA, VCE =-1V
IC =-500mA, VCE =-1V
IC =-1A, VCE =-1V*
IC =-500mA, VCE =-1V*
IC =-500mA, VCE =-1V
Transition Frequency
fT
100
MHz IC =-100mA, VCE =-5V,
f=100MHz
Output Capacitance
Cobo
25
pF
VCB =-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
For typical characteristics graphs see FMMT549 datasheet.
3 - 37
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