B20V140 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SILICON MICROWAVE POWER TRANSISTOR

BIPOLARICS, INC.
Part Number B20V140
SILICON MICROWAVE POWER TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• High Output Power
27.0 dBm, P_1dB @ 1.0 GHz
• High Gain Bandwidth Product
ft = 6.0 GHz @ I_C = 100 mA
DESCRIPTION AND APPLICATIONS:
Bipolarics' B20V140 is a high performance, low cost silicon bipolar
transistor intended for linear power applications at frequencies of 0.5 to
2.6 GHz. Uniformity and reliability are assured by the use of advanced
process techniques: ion implanted junctions, ion implanted ballast
resistors and gold metallization. When the B20V140 is bonded common
emitter, linear output power of 1 Watt can be achieved. By driving part
type B20V180 or B20V1160 combination thereof, higher output power
can be achieved.
• High Gain
G_PE = 14.0 dB @ 1.0 GHz
Absolute Maximum Ratings:
• Ceramic, BeO & Stripline packages
available
PERFORMANCE DATA:
• Electrical Characteristics (T_A = 25^oC)
SYMBOL
PARAMETERS
RATING UNITS
V_CBO
V_CEO
V_EBO
I_C
T_J
T_STG
Collector-Base Voltage
40
V
Collector-Emitter Voltage
20
V
Emitter-Base Voltage
3.0
V
Collector Current (instantaneous) 160
mA
Junction Temperature
200
o_C
Storage Temperature
-65 to +150 ^oC
SYMBOL
PARAMETERS & CONDITIONS
V_CE =15V, I_C = 100 mA, Class A, unless stated
P_1dB
G_1dB
η
Power output at 1 dB compression:
Gain at 1dB compression:
Collector Efficiency
f = 1.0 GHz
f = 1.0 GHz
Class A
C_CB
h_FE
P_T
Collector Base Capacitance:
f = 1 MHz, I _E = 0
Forward Current Transfer Ratio: V_CE = 8V, I_C =50 mA
Total Power Dissipation
UNIT
dBm
dB
%
pF
W
MIN.
TYP. MAX.
27.0
9.0
30
0.7
1.0
20
60
100
1.5