B06N60 Datasheet, PDF (1/6 Pages) –

B06N60
N-Channel Power MOSFET
• Advanced Process Technology
• Ultra low On-Resistance Provides Higher Efficiency
• Avalanche Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS (on) Specified at Elevated Temperature
DESCRIPTION
This high voltage MOSFET used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and
commutation time. Designed for high voltage, high speed switching application in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operation areas
critical and offer additional and safety margin against unexpected voltage transients.
D
G
S
VDSS = 600V
RDS (on) = 1.2 Ω
ID = 6.0 A
TO-220
S
Drain to Current – Continuous
ABSOLUTE MAXIMUM RATINGS
Rating
Gate-to-Source Voltage – Continue
- Non-repetitive
Total Power Dissipation
Derate Above 25℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy – TJ = 25 ℃
(VDD = 100V, VGS= 10V, IL =6A, L = 10mH, RG=25Ω)
Thermal Resistance – Junction to Case
- Junction to Ambient
Maximum Led Temperature for Solding Purpose, 1/8” from case for 10 seconds
Symbol
ID
VGS
VGSM
PD
TJ, TSTG
EAS
ΘJC
ΘJA
TL
Value
6.0
+/- 20
+/- 40
125
1.0
-55 to 150
180
1.0
62.5
260
Unit
A
V
V
W
W/℃
℃
mJ
℃/W
℃
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