AUIRFR3607 Datasheet, PDF (1/13 Pages) International Rectifier – Advanced Process Technology

AUTOMOTIVE GRADE
PD - 96376
AUIRFR3607
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
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Description
AUIRFU3607
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
S I_{D (Package Limited)}
75V
7.34mΩ
c ^9.0mΩ
80A
56A
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
D
S
G
D-Pak
AUIRFR3607
S
D
G
I-Pak
AUIRFU3607
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Max.
80™
56™
56
310
140
Units
A
W
Linear Derating Factor
0.96
W/°C
V_GS
E_{AS (Thermally limited)}
I_AR
E_AR
dv/dt
e ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy
Ãd Avalanche Current
g Repetitive Avalanche Energy
f Peak Diode Recovery
± 20
120
46
14
27
V
mJ
A
mJ
V/ns
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
°C
300(1.6mm from case)
Thermal Resistance
Parameter
R_θJC
k Junction-to-Case
R_θJA
j Junction-to-Ambient
R_θJA
j Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/22/11