AUIRFP4004 Datasheet, PDF (1/11 Pages) International Rectifier – Specifically designed for Automotive applications

AUTOMOTIVE GRADE
PD - 96407A
AUIRFP4004
Features
l Advanced Process Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
HEXFET^® Power MOSFET
D V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
40V
1.35mΩ
1.70mΩ
c 350A
195A
D
G
Gate
S
D
G
TO-247AC
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Max.
™ 350
™ 250
195
1390
380
Units
A
W
Linear Derating Factor
2.5
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
e ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy (Thermally limited)
Ãd Avalanche Current
g Repetitive Avalanche Energy
f Peak Diode Recovery
± 20
290
See Fig. 14, 15, 21a, 21b
2.0
V
mJ
A
mJ
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
x x 10lb in (1.1N m)
Thermal Resistance
Symbol
R_θJC
Parameter
k Junction-to-Case
R_θCS
R_θJA
Case-to-Sink, Flat Greased Surface
j Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.40
–––
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
09/06/11