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AUIRFP2907Z Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET | |||
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PD - 97550
AUIRFP2907Z
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
â Advanced Process Technology
â Ultra Low On-Resistance
â 175°C Operating Temperature
G
â Fast Switching
â Repetitive Avalanche Allowed up to Tjmax
â Lead-Free, RoHS Compliant
â Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
D
S
G
Gate
V(BR)DSS
RDS(on) max.
ID
75V
4.5mâ¦
170A
D
S
D
G
TO-247AC
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
c Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
170
A
120
680
310
W
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
2.0
± 20
520
690
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbfâ¢in (1.1Nâ¢m)
RθJC
RθCS
RθJA
j Junction-to-Case
Parameter
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
âââ
0.24
âââ
Max.
0.49
âââ
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/13/2010
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