AUIRFL024N Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
AUIRFL024N
Features
• Advanced Planar Technology
• Low On-Resistance
• Dynamic dV/dT Rating
• 150°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide
variety of other applications.
HEXFET^® Power MOSFET
D _V(BR)DSS
55V
G
R_DS(on) max. _75mΩ
S I_D
2.8A
G
Gate
D
S
D
G
SOT-223
AUIRFL024N
D
Drain
S
Source
Base part number
AUIRFL024N
Package Type
SOT-223
Standard Pack
Form
Quantity
Tube
95
Tape and Reel
2500
Orderable Part Number
AUIRFL024N
AUIRFL024NTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 25°C
Parameter
h Continuous Drain Current, V_GS @ 10V
g Continuous Drain Current, V_GS @ 10V
g Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
h Power Dissipation (PCB Mount)
g Power Dissipation (PCB Mount)
g Linear Derating Factor (PCB Mount)
Max.
4.0
2.8
2.3
11.2
2.1
1.0
8.3
Units
A
W
mW/°C
V_GS
Gate-to-Source Voltage
± 20
V
E_AS
d Single Pulse Avalanche Energy (Thermally Limited)
214
mJ
I_AR
Ù Avalanche Current
2.8
A
E_AR
™g Repetitive Avalanche Energy
0.1
mJ
dv/dt
e Peak Diode Recovery dv/dt
5.0
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R_θJA
g Junction-to-Ambient (PCB mount, steady state)
90
120
°C/W
R_θJA
h Junction-to-Ambient (PCB mount, steady state)
50
60
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
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March 26, 2014