AUIRFB3207 Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET

Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUTOMOTIVE GRADE
D
G
S
PD - 96322
AUIRFB3207
HEXFET^® Power MOSFET
V_(BR)DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
75V
3.6mΩ
4.5mΩ
c 170A
75A
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
G
Gate
DS
G
TO-220AB
AUIRFB3207
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise
specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dV/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
e ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy (Thermally limited)
Ãd Avalanche Current
Repetitive Avalanche Energy
f Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
170™
120™
75
720
300
2.0
± 20
910
See Fig. 14, 15, 16a, 16b,
5.8
-55 to + 175
300
x x 10lb in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface , TO-220
R_θJA
Junction-to-Ambient, TO-220
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/21/10