AUIRF3805 Datasheet, PDF (1/15 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 96319
AUIRF3805
AUIRF3805S
Features
AUIRF3805L
HEXFET^® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D
V_(BR)DSS
55V
R_DS(on) typ. 2.6mΩ
max. 3.3mΩ
G
c I_{D (Silicon Limited)} 210A
S
I_{D (Package Limited)} 160A
Description
D
D
D
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
DS
G
DS
G
TO-220AB
AUIRF3805
D²Pak
AUIRF3805S
DS
G
TO-262
AUIRF3805L
variety of other applications.
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
d ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
Max.
™ 210
™ 150
160
890
300
2.0
Units
A
W
W/°C
V_GS
E_AS
E_AS (Tested )
I_AR
E_AR
Gate-to-Source Voltage
e Single Pulse Avalanche Energy (Thermally limited)
e Single Pulse Avalanche Energy Tested Value
Ãd Avalanche Current
h Repetitive Avalanche Energy
± 20
V
650
940
mJ
See Fig.12a, 12b, 15, 16
A
mJ
T_J
T_STG
Operating Junction and
-55 to + 175
Storage Temperature Range
°C
i ^{Soldering Temperature, for 10 seconds (1.6mm from case )}
Mounting Torque, 6-32 or M3 screw
y y ³⁰⁰
10 lbf in (1.1N m)
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
k Junction-to-Case
i Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
j Junction-to-Ambient (PCB Mount)
Typ.
–––
0.50
–––
–––
l ^Max.
0.5
–––
62
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10