AUIRF3305 Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Planar Technology

AUTOMOTIVE MOSFET
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
G
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
PD - 96336
AUIRF3305
HEXFET^® Power MOSFET
D
V_(BR)DSS
55V
R_DS(on) max. 8m_Ω
S
I_D
140A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
G
Gate
TO-220AB
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
™ ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (Tested )
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
d Single Pulse Avalanche Energy(Thermally limited)
dh Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θCS
R_θJA
i Junction-to-Case
Parameter
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
140
99
560
330
2.2
± 20
470
860
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/02/10