AUIRF3205Z Datasheet, PDF (1/14 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 97542
AUTOMOTIVE GRADE
AUIRF3205Z
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to
Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
AUIRF3205ZS
HEXFET^® Power MOSFET
D
V_(BR)DSS
55V
R_DS(on) max.
6.5mΩ
G
I_{D (Silicon Limited)}
110A
S
I_{D (Package Limited)}
75A
Description
Specifically designed for Automotive applications,
D
this HEXFET^® Power MOSFET utilizes the latest
D
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
DS
G
DS
G
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
TO-220AB
AUIRF3205Z
D²Pak
AUIRF3205ZS
of other applications.
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise
specified.
Parameter
Max.
Units
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V (Package Limited)
™ Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
110
78
75
440
170
1.1
± 20
180
250
See Fig.12a, 12b, 15, 16
A
W
W/°C
V
mJ
A
mJ
T_J
Operating Junction and
T_STG
Storage Temperature Range
i ^{Soldering Temperature, for 10 seconds (1.6mm from case )}
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
k Junction-to-Case
R_θCS
i Case-to-Sink, Flat Greased Surface
R_θJA
i Junction-to-Ambient
R_θJA
j Junction-to-Ambient (PCB Mount)
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
-55 to + 175
y y ³⁰⁰
10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.90
–––
62
40
°C
Units
°C/W
www.irf.com
1
07/23/2010