AUIRF2907Z Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 97545
AUTOMOTIVE GRADE
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
G
● Repetitive Avalanche Allowed up to
Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
AUIRF2907Z
HEXFET^® Power MOSFET
D
V_(BR)DSS
75V
R_DS(on) max. _4.5mΩ
I_{D (Silicon Limited)}
170A
S
I_{D (Package Limited)}
75A
D
G
Gate
DS
G
TO-220AB
AUIRF2907Z
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
T_J
T_STG
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
i Single Pulse Avalanche Energy Tested Value
c Avalanche Current
h Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
170
120
75
680
300
2.0
± 20
270
690
See Fig.12a,12b,15,16
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
300
10 lbf•in (1.1N•m)
R_θJC
R_θCS
R_θJA
j Junction-to-Case
Parameter
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
k 0.50
–––
62
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/23/2010