AUIRF2807 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology, Low On-Resistance

AUTOMOTIVE GRADE
PD - 96384A
AUIRF2807
Features
HEXFET^® Power MOSFET
l Advanced Planar Technology
D
V_(BR)DSS
75V
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
R_DS(on) max. 13m_Ω
l Fast Switching
l Fully Avalanche Rated
G
I_{D(Silicon Limited)}
h 82A
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
S
I_{D (Package Limited)}
75A
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, pro-
vides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
D
G
Gate
S
D
G
TO-220AB
AUIRF2807
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
™ ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Max.
82h
58
75
280
230
1.5
Units
A
W
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
dg Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
±20
V
340
mJ
43
A
23
mJ
5.9
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
-55 to + 175
°C
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
Max.
Units
R_θJC
R_θCS
R_θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
0.65
0.50
–––
°C/W
–––
62
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/09/11