AUIRF1405ZS-7P Datasheet, PDF (1/13 Pages) List of Unclassifed Manufacturers – Ultra Low On-Resistance

AUTOMOTIVE GRADE
AUIRF1405ZS-7P
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
l Automotive Qualified *
Description
This HEXFET^® Power MOSFET utilizes the
latest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of this design are a 175°C
junction operating temperature, fast switching
speed and improved repetitive avalanche
rating.These features combine to make this
design an extremely efficient and reliable device
for use in a wide variety of applications.
HEXFET^® Power MOSFET
D
V_DSS = 55V
G
R_DS(on) = 4.9mΩ
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
I_D = 120A
D²Pak 7 Pin
Base Part Number
AUIRF1405ZS-7P
Package Type
D2Pak- 7 Pin
Standard Pack
Form
Tube
Tape and Reel Left
Quantity
50
800
Orderable Part Number
AUIRF1405ZS-7P
AUIRF1405ZS-7TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
ID @ TC = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
EAR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, V_GS @ 10V (Package Limited)
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
c Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
150
100
120
590
230
1.5
± 20
250
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Rθ_JC
RθJA
Parameter
i Junction-to-Case
hi Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
–––
Max.
0.65
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015