AUIRF1405 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 97691A
AUIRF1405
Features
HEXFET^® Power MOSFET
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
D
V_(BR)DSS
R_DS(on) typ.
55V
4.6m
l Fast Switching
l Fully Avalanche Rated
G
l Repetitive Avalanche Allowed
max
I_{D (Silicon Limited)}
h ^5.3m
169A
up to Tjmax
l Lead-Free, RoHS Compliant
S
I_{D (Package Limited)}
75A
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
D
G
Gate
DS
G
TO-220AB
AUIRF1405
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
169h
118h
Units
A
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
75
I_DM
™ Pulsed Drain Current
680
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
Ù Avalanche Current
i Repetitive Avalanche Energy
e Peak Diode recovery dv/dt
Operating Junction and
330
2.2
± 20
560
See Fig.12a, 12b, 15, 16
5.0
-55 to + 175
W
W/°C
V
mJ
A
mJ
V/ns
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_JC
j Junction-to-Case
R_CS
Case-to-Sink, Flat, Greased Surface
R_JA
Junction-to-Ambient
y y 300 (1.6mm from case )
10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/10/11