AUIRF1404Z Datasheet, PDF (1/15 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 97460
AUIRF1404Z
AUIRF1404ZS
Features
l Advanced Process Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
G
l Automotive Qualified *
AUIRF1404ZL
HEXFET^® Power MOSFET
D
V_(BR)DSS
R_DS(on) max.
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
40V
3.7mΩ
n 180A
160A
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D
D
D
DS
G
DS
G
TO-220AB
AUIRF1404Z
D²Pak
AUIRF1404ZS
DS
G
TO-262
AUIRF1404ZL
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
i ^{Soldering Temperature, for 10 seconds (1.6mm from case )}
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
l Junction-to-Case
R_θCS
i Case-to-Sink, Flat Greased Surface
R_θJA
i Junction-to-Ambient
R_θJA
j Junction-to-Ambient (PCB Mount)
Max.
n 180
120
160
710
200
1.3
± 20
330
480
See Fig.12a, 12b, 15, 16
-55 to + 175
y y ³⁰⁰
10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
0.50
–––
–––
Max.
k 0.75
–––
62
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/19/2010