AUIRF1324S Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET

Power MOSFET

AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D
G
S
PD - 97483
AUIRF1324S
AUIRF1324L
HEXFET^® Power MOSFET
V_DSS
R_DS(on) typ.
I_{D (Silicon Limited)}
24V
1.3mΩ
c 340A
I_{D (Package Limited)} 195A
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switch-
ing speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
GDS
D²Pak
AUIRF1324S
S
D
G
TO-262
AUIRF1324L
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
e Single Pulse Avalanche Energy (Thermally Limited)
Ãd Avalanche Current
d Repetitive Avalanche Energy
f Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
k Junction-to-Case
j Junction-to-Ambient (PCB Mounted, steady-state)
Max.
340
240
195
1420
300
2.0
± 20
270
See Fig. 14, 15, 22a, 22b
0.46
-55 to + 175
300
Typ.
–––
–––
Max.
0.50
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/29/2010