AUIRF1018ES Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

AUTOMOTIVE GRADE
PD - 97711
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
AUIRF1018ES
HEXFET^® Power MOSFET
D
V_DSS
60V
R_DS(on) typ.
7.1m:
G
max. 8.4m:
S
I_D
79A
G
Gate
D
DS
G
D²Pak
IRF1018ESPbF
D
D ra in
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
Units
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
79
56
A
315
110
W
Linear Derating Factor
0.76
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
d ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy (Thermally limited)
c Avalanche Current
f Repetitive Avalanche Energy
e Peak Diode Recovery
± 20
88
47
11
21
V
mJ
A
mJ
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
°C
300
(1.6mm from case)
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
j Junction-to-Case
i Junction-to-Ambient (PCB Mount) , D²Pak
Typ.
–––
–––
Max.
1.32
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/19/11