AUIRF1010Z Datasheet, PDF (1/15 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 97458A
AUIRF1010Z
AUIRF1010ZS
Features
● Advanced Process Technology
AUIRF1010ZL
HEXFET^® Power MOSFET
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to
Tjmax
● Lead-Free, RoHS Compliant
G
● Automotive Qualified *
Description
D
V_(BR)DSS
R_DS(on) max.
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
55V
7.5m
94A
75A
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
D
processing techniques to achieve extremely low on-
D
D
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
DS
G
TO-220AB
AUIRF1010Z
DS
G
D²Pak
AUIRF1010ZS
DS
G
TO-262
AUIRF1010ZL
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise
specified.
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Power Dissipation
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_JC
k Junction-to-Case
R_CS
i Case-to-Sink, Flat Greased Surface
R_JA
i Junction-to-Ambient
R_JA
j Junction-to-Ambient (PCB Mount)
Max.
94
66
75
360
140
0.90
± 20
130
180
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/13/2012