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AT45DB081E Datasheet, PDF (1/69 Pages) List of Unclassifed Manufacturers – 8-Mbit DataFlash (with Extra 256-Kbits), 1.65V Minimum SPI Serial Flash Memory | |||
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AT45DB081E
8-Mbit DataFlash (with Extra 256-Kbits), 1.65V Minimum
SPI Serial Flash Memory
Features
PRELIMINARY DATASHEET
ï¬ Single 1.65V - 3.6V supply
ï¬ Serial Peripheral Interface (SPI) compatible
ï¬ Supports SPI modes 0 and 3
ï¬ Supports RapidS⢠operation
ï¬ Continuous read capability through entire array
ï¬ Up to 85MHz
ï¬ Low-power read option up to 15MHz
ï¬ Clock-to-output time (tV) of 6ns maximum
ï¬ User configurable page size
ï¬ 256 bytes per page
ï¬ 264 bytes per page (default)
ï¬ Page size can be factory pre-configured for 256 bytes
ï¬ Two fully independent SRAM data buffers (256/264 bytes)
ï¬ Allows receiving data while reprogramming the main memory array
ï¬ Flexible programming options
ï¬ Byte/Page Program (1 to 256/264 bytes) directly into main memory
ï¬ Buffer Write
ï¬ Buffer to Main Memory Page Program
ï¬ Flexible erase options
ï¬ Page Erase (256/264 bytes)
ï¬ Block Erase (2KB)
ï¬ Sector Erase (64KB)
ï¬ Chip Erase (8-Mbits)
ï¬ Program and Erase Suspend/Resume
ï¬ Advanced hardware and software data protection features
ï¬ Individual sector protection
ï¬ Individual sector lockdown to make any sector permanently read-only
ï¬ 128-byte, One-Time Programmable (OTP) Security Register
ï¬ 64 bytes factory programmed with a unique identifier
ï¬ 64 bytes user programmable
ï¬ Hardware and software controlled reset options
ï¬ JEDEC Standard Manufacturer and Device ID Read
ï¬ Low-power dissipation
ï¬ 400nA Ultra-Deep Power-Down current (typical)
ï¬ 4.5μA Deep Power-Down current (typical)
ï¬ 25μA Standby current (typical)
ï¬ 11mA Active Read current (typical at 20MHz)
ï¬ Endurance: 100,000 program/erase cycles per page minimum
ï¬ Data retention: 20 years
ï¬ Complies with full industrial temperature range
ï¬ Green (Pb/Halide-free/RoHS compliant) packaging options
ï¬ 8-lead SOIC (0.150" wide and 0.208" wide)
ï¬ 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
DS-45DB081E-028CâDFLASHâ10/2013
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