English
Language : 

AR1100-IMQ Datasheet, PDF (1/12 Pages) List of Unclassifed Manufacturers – 4.9-5.8 GHz High-Linearity Power Amplifier
4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
FEATURES:
SST1LP124.9-5.8 GHz High-Linearity Power Amplifier
Data Sheet
• High gain
• High linear output power:
– Meets 802.11a OFDM Spectrum Mask require-
ment up to 24 dBm over the entire band
– Added EVM <4% up to 21 dBm for
54 Mbps 802.11a signal
• High power-added efficiency/Low operating
current for 6 Mbps 802.11a applications
– ~17% @ POUT = 23 dBm for 6 Mbps
• Built-in Ultra-low IREF power-up/down control
– IREF <3 mA
• Low idle current
– ~150 mA ICQ
• High speed power up/down
– Turn on/off time (10%~90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
• High temperature stability
• Low shut-down current (~2 µA)
• On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact WQFN (3mm x 3mm)
– Non-Pb (lead-free) packages available
APPLICATIONS:
• WLAN (IEEE 802.11a)
• Japan WLAN
• HyperLAN2
• Multimedia
PRODUCT DESCRIPTION
The SST11LP12 is a high-power, high-gain power amplifier
based on the highly-reliable InGaP/GaAs HBT technology.
The SST11LP12 can be easily configured for high-power,
high-efficiency applications with superb power-added effi-
ciency while operating over the entire 802.11a frequency
band for U.S., European, and Japanese markets (4.9-5.8
GHz).
The SST11LP12 has excellent linearity, typically <4%
added EVM at 21 dBm output power which is essential for
54 Mbps 802.11a operation while meeting 802.11a spec-
trum mask at 24 dBm. SST11LP12 also has wide-range
(>20 dB), temperature-stable (~1 dB over 85°C), single-
ended/differential power detectors which lower users’ cost
on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Ultra-
low reference current (total IREF <3 mA) makes the
SST11LP12 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST11LP12 ideal for
the final stage power amplification in battery-powered
802.11a WLAN transmitter and access point applications.
The SST11LP12 is offered in 16-contact WQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
©2010 Silicon Storage Technology, Inc.
S71278-04-000
12/10
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.