6MBI75UA-120 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – IGBT Module U-Series 1200V / 75A 6 in one-package

6MBI75UA-120
IGBT Module U-Series ^{1200V / 75A 6 in one-package}
Features
Applications
· High speed switching
· Voltage drive
· Low inductance module structure
· Inverter for Motor drive
· Uninterruptible power supply
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
VCES
VGES
IC
ICp
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
-IC
-IC pulse
PC
Tj
Tstg
Viso
Conditions
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
AC:1min.
Rating
1200
±20
100
75
200
150
75
150
390
+150
-40 to +125
2500
Unit
V
V
A
W
°C
VAC
between thermistor and others *2
Screw Torque Mounting *3
-
3.5
N·m
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Unit
Min.
Typ.
Max.
Zero gate voltage collector current ICES
VGE=0V, VCE=1200V
–
–
1.0
mA
Gate-Emitter leakage current
IGES
VCE=0V, VGE=±20V
–
–
200
nA
Gate-Emitter threshold voltage
VGE(th)
VCE=20V, IC=75mA
4.5
6.5
8.5
V
Collector-Emitter saturation voltage VCE(sat) _{VGE=15V, IC=75A Tj=25°C}
–
2.05
2.40
V
(terminal)
Tj=125°C
–
2.30
–
VCE(sat)
Tj=25°C
–
1.75
2.10
(chip)
Tj=125°C
–
2.00
–
Input capacitance
Cies
VCE=10V, VGE=0V, f=1MHz
–
8
–
nF
Turn-on time
ton
VCC=600V
–
0.25
1.20
µs
tr
IC=75A
–
0.12
0.60
tr(i)
VGE=±15V
–
0.03
–
Turn-off time
toff
RG=9.1 Ω
–
0.36
1.00
tf
–
0.07
0.30
Forward on voltage
VF
VGE=0V
Tj=25°C
–
2.10
2.50
V
(terminal) IF=75A
Tj=125°C
–
2.30
–
VF
Tj=25°C
–
1.80
2.20
(chip)
Tj=125°C
–
2.00
–
Reverse recovery time
trr
IF=75A
–
–
0.35
µs
Lead resistance, terminal-chip*4
Resistance
R lead
R
T=25°C
–
4.1
–
5000
–
mΩ
–
Ω
T=100°C
465
495
520
B value
B
*4:Biggest internal terminal resistance among arm.
T=25/50°C
3305
3375
3450
Κ
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Unit
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Min.
–
–
–
Typ.
–
–
0.05
Max.
0.32
0.73
–
°C/W
°C/W
°C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound