6MBI300U-170 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – IGBT Module U-Series

6MBI300U-170
IGBT Module U-Series ^{1700V / 300A 6 in one-package}
Features
Applications
· High speed switching
· Inverter for Motor drive
· Uninterruptible power supply
· Voltage drive
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
· Low inductance module structure
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Conditions
Rating
Unit
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
VCES
VGES
IC
Continuous Tc=25°C
1700
V
±20
V
450
A
Tc=80°C
300
ICp
1ms Tc=25°C
900
Tc=80°C
600
-IC
300
Collector Power Dissipation
Junction temperature
-IC pulse
PC
Tj
1 device
600
1385
W
+150
°C
Storage temperature
Tstg
Isolation voltage between terminal and copper base *1 Viso
AC:1min.
-40 to +125
3400
VAC
between thermistor and others *2
Screw Torque Mounting *3
-
3.5
N·m
Terminals *4
4.5
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Unit
Min.
Typ.
Max.
Zero gate voltage collector current ICES
VGE=0V, VCE=1700V
–
–
3.0
mA
Gate-Emitter leakage current
IGES
VCE=0V, VGE=±20V
–
–
600
nA
Gate-Emitter threshold voltage
VGE(th)
VCE=20V, IC=300mA
4.5
6.5
8.5
V
Collector-Emitter saturation voltage VCE(sat) _{VGE=15V, IC=300A Tj=25°C}
–
2.35
2.85 V
(terminal)
Tj=125°C
–
2.70
–
VCE(sat)
Tj=25°C
–
2.05
2.55
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*4
Resistance
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
B value
B
*4:Biggest internal terminal resistance among arm.
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=900V
IC=300A
VGE=±15V
RG=2 Ω
VGE=0V
IF=300A
IF=300A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
T=25°C
T=100°C
T=25/50°C
–
–
–
–
–
–
–
–
–
–
–
–
–
–
465
3305
2.40
–
30
–
nF
0.58
1.20 µs
0.32
0.60
0.10
–
0.80
1.50
0.15
0.30
2.10
2.85 V
2.30
–
1.80
2.55
2.00
–
0.3
0.6
µs
1.0
–
mΩ
5000
–
Ω
495
520
3375
3450
Κ
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Unit
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Min.
–
–
–
Typ.
–
–
0.0167
Max.
0.09
0.15
–
°C/W
°C/W
°C/W
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.