6MBI225U-120 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – IGBT Module U-Series 1200V / 225A 6 in one-package

6MBI225U-120
IGBT Module U-Series ^{1200V / 225A 6 in one-package}
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· Uninterruptible power supply
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Conditions
Rating
Unit
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltaga
VGES
±20
V
Collector current
IC
Continuous Tc=25°C
300
A
Tc=80°C
225
ICp
1ms Tc=25°C
600
Tc=80°C
450
-IC
225
-IC pulse
450
Collector Power Dissipation
PC
1 device
1040
W
Junction temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +125
Isolation voltage between terminal and copper base *1 Viso
AC:1min.
2500
VAC
between thermistor and others *2
Screw Torque Mounting *3
-
3.5
N·m
Terminals *4
4.5
*1 : All terminals should be connected together when isolation test will be done.
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Unit
Zero gate voltage collector current ICES
VGE=0V, VCE=1200V
Min.
–
Typ.
–
Max.
3.0
mA
Gate-Emitter leakage current
IGES
VCE=0V, VGE=±20V
–
–
600
nA
Gate-Emitter threshold voltage
VGE(th)
VCE=20V, IC=225mA
4.5
6.5
8.5
V
Collector-Emitter saturation voltage VCE(sat) _{VGE=15V, IC=225A Tj=25°C}
–
2.00
2.35
V
(terminal)
Tj=125°C
–
2.25
–
VCE(sat)
Tj=25°C
–
1.75
2.10
(chip)
Tj=125°C
–
2.00
–
Input capacitance
Cies
VCE=10V, VGE=0V, f=1MHz
–
25
–
nF
Turn-on time
ton
VCC=600V
–
0.36
1.20
µs
tr
IC=225A
–
0.21
0.60
tr(i)
VGE=±15V
–
0.03
–
Turn-off time
toff
RG=3 Ω
–
0.37
1.00
tf
–
0.07
0.30
Forward on voltage
VF
VGE=0V
Tj=25°C
–
1.85
2.15
V
(terminal) IF=225A
Tj=125°C
–
1.95
–
VF
Tj=25°C
–
1.60
1.90
(chip)
Tj=125°C
–
1.70
–
Reverse recovery time
trr
IF=225A
–
–
0.35
µs
Lead resistance, terminal-chip*4
Resistance
R lead
R
T=25°C
–
1.0
–
5000
–
mΩ
–
Ω
T=100°C
465
495
520
B value
B
*4:Biggest internal terminal resistance among arm.
T=25/50°C
3305
3375
3450
Κ
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Unit
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Min.
–
–
–
Typ.
–
–
0.0167
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Max.
0.12
0.20
–
°C/W
°C/W
°C/W