2SB970_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB970
Transistors
■ Features
● Low collector to emitter saturation voltage VCE(sat).
● For low-voltage output amplification
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-15
VCEO
-10
V
VEBO
-7
IC
-500
mA
ICP
-1
A
PC
200
mW
TJ
150
℃
Tstg
-55 to 150
1.Base
2.Emitter
3.collector
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
■ Classification of hfe(1)
Type
Range
Marking
2SB970-R
130-220
1RR
2SB970-S
180-350
1RS
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= -100 μA， IE=0
-15
V
VCEO Ic= -1 mA， IB=0
-10
VEBO IE= -100μA， IC=0
-7
ICBO VCB= - 10V , IE=0
-0.1 uA
IEBO VEB= -6V , IC=0
-0.1
VCE(sat) IC=-400 mA, IB=-8mA
VBE(sat) IC=-400 mA, IB=-8mA
-0.16 -0.3
V
-0.8 -1.2
VCE= -2V, IC= -500mA
hFE
VCE= -2V, IC= -1A
130
350
60
Cob VCB= -10V, IE= 0,f=1MHz
22
pF
fT
VCE= -10V, IE= 50mA，f=200MHz
130
MHz
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