2SB800_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB800
Transistors
■ Features
● High Collector to Emitter Voltage:VCEO>-80V
● Complement to 2SD1001
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Note.1: PW≦10ms,Duty Cycle≦50%
■ Electrical Characteristics Ta = 25℃
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-80
-80
-5
-300
-500
2
150
-55 to 150
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
VCBO Ic= -100 μA， IE=0
Collector- emitter breakdown voltage
VCEO Ic= -1 mA， IB=0
Emitter - base breakdown voltage
VEBO IE= -100μA， IC=0
Collector-base cut-off current
ICBO VCB= -80 V , IE=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
Collector-emitter saturation voltage (Note.1) VCE(sat) IC=-300mA, IB=-30mA
Base - emitter saturation voltage (Note.1) VBE(sat) IC=-300mA, IB=-30mA
Base - emitter voltage (Note.1)
VBE VCE= -6V, IC= -10mA
DC current gain (Note.1)
VCE= -1V, IC= -50mA
hFE
VCE= -2V, IC= -300mA
Collector output capacitance
Cob VCB= -6V, IE= 0,f=1MHz
Transition frequency
fT
VCE= -6V, IE= 10mA
Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Type
Range
Marking
2SB800-M
90-180
FM
2SB800-L
135-270
FL
2SB800-K
200-400
FK
Unit
V
mA
W
℃
1.Base
2.Collector
3.Emitter
Min
-80
-80
-5
-600
90
30
Typ
-0.3
-0.9
-660
200
80
13
100
Max
-0.1
-0.1
-0.6
-1.2
-700
400
Unit
V
uA
V
mV
pF
MHz
www.kexin.com.cn ¹