2SB798_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SB798
Transistors
■ Features
● Low Collector Saturation Voltage:
VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA )
● Excellent DC Current Gain Linearity :
hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A)
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-30
VCEO
-25
V
VEBO
-5
IC
-1
A
ICP
-1.5
PC
2
W
TJ
150
℃
Tstg
-55 to 150
Note.1: PW≦10ms,Duty Cycle≦50%
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -30 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1 A, IB=-100mA
VBE(sat) IC=-1 A, IB=-100mA
VBE VCE= -6V, IC= -10mA
VCE= -1V, IC= -100mA
hFE
VCE= -1V, IC= -1A
Cob VCB= -6V, IE= 10mA,f=1MHz
fT
VCE= -6V, IC= -10mA
Min Typ Max
-30
-25
-5
-0.1
-0.1
-0.25 -0.4
-1 -1.2
-600 -640 -700
90 200 400
50 100
36
110
Unit
V
uA
V
mV
pF
MHz
Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Type
Range
Marking
2SB798-M
90-180
DM
2SB798-L
135-270
DL
2SB798-K
200-400
DK
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